Publication

Journal of Applied Physics (2021)
In-operando x-ray topography analysis of SiC metal_oxide_semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

Author

Kumiko Konishi,Ryusei Fujita,Keisuke Kobayashi,Akio Yoneyama,Kotaro Ishiji,Hiroyuki Okino,Akio Shima,Toru Ujihara

Category

Original article